副教授
    黄青松 副教授 - 简介

    职称:副教授/研究生导师

    学历学位:工学博士(材料学)

    Emailqshuang@scu.edu.cnqshuang21@sohu.com

    通讯地址:610065,成都市一环路南一段24号,四川大学化工学院

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黄青松 副教授 -- 个人学历、简历

v 博士后:新加坡国立大学(NUS, Research Fellow),

韩国科技学院(KAIST, Postdoc Fellow),

中国科学院物理研究所

v 博士:北京科技大学 新金属材料国家重点实验室;

v 硕士:北京科技大学 冶金学院炼铁研究所;

v 本科:北京科技大学 冶金系;

v 2013年起,四川大学化学工程学院冶金工程系,副教授。主持国家自然科学基金面上项目2项,四川大学引进人才基金一项。参与中科院知识创新工程项目一项,参与国家自然科学基金面上项目两项。在Sci/Ei级别期刊共发表文章20余篇,他引500余次。已授权发明专利10项。

在读研究生信息

Name

Grade

Email

Research

毕晓峰

2014级硕士研究生

1162781271@qq.com

能源材料与柔性触摸屏材料

刘文韬

2014级硕士研究生

792008856@qq.com

冶金资源和再生资源综合利用

齐瑞峰

2015级硕士研究生

602459322@qq.com

二硫化钼层状化合物的制备与应用

严志辉

2015级硕士研究生

314799637@qq.com

拓扑绝缘体

王腾(合作指导)

2015级硕士研究生

1054099390@qq.com

新型光催化剂

刘强

2016级硕士研究生

405083941@qq.com

新型碳材料

宋双(合作指导)

2016级博士研究生

505602757@qq.com

光催化

周若愚(联合培养)

重庆大学2014级博士

5569195@qq.com

纳米渗碳体颗粒的表征及应用研究

毕业研究生信息

Name

Grade

Email

After Graduation

段康佳

2012级硕士研究生

825130111@qq.com

美的集团

韩姗姗

2012级硕士研究生

124848066@qq.com

遂宁质检所

王淑杰(合作指导)

2013级硕士研究生

398066825@qq.com

宝钢国贸成都分公司

黄青松 副教授 -- 科学研究

研究方向

从事材料、物理和化学的交叉学科研究,主要方向为:石墨烯、二硫化钼及黑磷等二维层状半导体材料的制备、表征及应用研究,应用主要集中在电化学、光电化学和光学性质等方面

研究项目

1)国家自然科学基金(NSFC);课题名称:一维石墨烯纳米条带上转换基础研究Grant No. 51472170, 2015.01-2018.12

2)四川大学引进人才基金;课题名称:多元复合合金炼钢过程夹杂物改性的基础研究(Grant No. 21376154, 2013.01-2015.12)。

3国家自然科学基金(NSFC);课题名称基于SiC单晶的石墨烯和类石墨烯外延生长和表征研究(Grant No. 50472162, 2010.01-2012.12

4参与国家自然基金面上项目2项,及中国科学院知识创新工程项目1项。主持教学改革项目1项。

专利成果

1. 陈小龙、黄青松、王文军、王皖燕、杨蓉,在碳化硅(SiC)基底上外延生长石墨烯的方法.已授权200910077648.8

2. 陈小龙、黄青松、王刚、王文军、王皖燕、郭丽伟、林菁菁、贾玉萍、李康、彭同华,一种在碳化硅基底上外延生长的冷阴极场发射材料及方法.专利号:ZL 2009 1 0243028.7

3. 陈小龙、黄青松、郭丽伟、王锡铭、郑红军,高质量碳化硅表面的获得方法.已授权 201010588043.8.

4. 陈小龙、黄青松、王波、王锡铭、李龙远、郑红军、郭钰,一种SiC单晶平整度的调整方法—湿法刻蚀.已授权,201010588030.0.

5. 张贺、陈小龙、黄青松、王锡铭,一种碳化硅用抛光液的制备和使用方法.已授权 201010591103.1.

6. 张贺、胡伯清、黄青松、王锡明、陈小龙、彭同华,一种SiC单晶晶片的加工方法. 已授权 ZL 2009 1 0243519.1

7. 张贺、胡伯清、林菁菁、黄青松、刘金义、王锡铭、彭同华、陈小龙,一种有蜡加工晶片用粘结剂及其制备方法.专利号:ZL 2009 1 0236734.9

8. 孙祖庆、杨王玥、李龙飞、黄青松、陈伟,一种制备超细化复相结构高碳钢的方法. 专利号:ZL 200710063576

9. 黄青松,王冠翊,王良瑞,唐佳琪,一种厘米量级单晶三氧化钼纳米带的制备方法,申请号201611071670.8.

10. 黄青松,段康佳,袁熙志,磁悬浮辅助硅及其合金对钢中氧化铝夹杂改性的方法,授权,2016.8.17,201410727013.9.

11. 黄青松,蒲旺旺,段康佳,一种纳米颗粒弥散强化钢的冶炼方法,授权,2016.6.22,201410473694.0

黄青松 副教授 -- 发表论文

发表论文

1. Q. S. Huang, J. J. Kim, G. Ali, and *S. O. Cho. Width-tunable graphene nanoribbons on a SiC substrate with a controlled step height, Adv. Mater., 2013, 25, 1144. IF=18.960

2. Q. S. Huang, G. Wang , L. W. Guo , Y. P. Jia , J. J. Lin , K. Li, W. J. Wang, and *X. L. Chen. Approaching the intrinsic electron field-emission of a graphene film consisting of quasi-freestanding graphene strips. Small 2011, 7, 450. IF=8.315

3. J. Liu, Z. P. Guo, W. J. Wang, Q. S. Huang, K. Zhu and *X. L. Chen. Heterogeneous ZnS hollow urchin-like hierarchical nanostructures and their structure-enhanced photocatalytic properties. Nanoscale, 2011, 3, 1470. IF=7.760

4. Y. Liu, *G. Wang, Q. S. Huang, L. W. Guo, and *X. L. Chen, Structural and Electronic Properties of T Graphene: A Two-Dimensional Carbon Allotrope with Tetrarings, Phys. Rev. Lett., 2012, 108(22), 1. IF=7.645

5. Y. Liu, *G. Wang, Q. S. Huang, L. W. Guo, and *X. L. Chen, Comment on “Structural and Electronic Properties of T Graphene: A Two-Dimensional Carbon Allotrope with Tetrarings” Reply, Phys. Rev. Lett., 2013, 110(2), 029601. IF=7.645

6. Y. Liu, *G. Wang, Q. S. Huang, L. W. Guo, and *X. L. Chen, omment on “Structural and Electronic Properties of T Graphene: A Two-Dimensional Carbon Allotrope with Tetrarings” Reply, Phys. Rev. Lett., 2013,110(2), 029603. IF=7.645

7. Q. S. Huang, *X. L. Chen, W. J. Wang, G. Wang, W. Y. Wang, J. Liu, and L. W. Guo. Large-scale formation of epitaxial graphene on 4H-SiC (0001) by pulsed electron irradiation, Chem. Comm. 2010, 46, 4917. IF=6.567

8. D. L. Chen, S. H. Yoo, Q. S. Huang, G. Ali, and *S. O. Cho. Sonochemical Synthesis of Ag/AgCl Nanocubes and Their Efficient Visible-Light-Driven Photocatalytic Performance, Chem. A. Eu. J. 2012, 18, 5192. IF=5.771

9. Yu Liu*, Lianlian Chen*, Donovan Hilliard, Qingsong Huang, Fang Liu, Mao Wang, Roman Böttger, René Hübner, Alpha T. N'Diaye, Elke Arenholz, Viton Heera, Wolfgang Skorupa, Shengqiang Zhou, Controllable growth of vertically aligned graphene on C-face SiC, Scientific Reports 2016, 6, 34814 . IF=5.228

10. Q. S. Huang, *X. L. Chen, J. J. Lin, K. Li, Y. P. Jia, J. Liu, L. W. Guo, W. J. Wang, and G. Wang. Preparation of Quasi-Free Standing Graphene with a Super Large Interlayer Distance by Methane Intercalation. J. Phys. Chem. C 2011, 115, 20538. IF=4.509

11. Xiaofeng Bi, Wentao Liu, Qingsong Huang,*, and Jinghua PangControllable Magnetism of CoO Nanoparticles Modified by the Reduced Graphene OxideJ. Phys. Chem. C 2015, 119, 20755. (IF=4.509)

12. Shujie Wang, Xizhi Yuan, Xiaofeng Bi, Xiaomei Wang and Qingsong Huang*, Observation of the retarded transportation of a photogenerated hole on epitaxial graphene, Phys.Chem.Chem.Phys.,2015, 17, 23711 IF=4.449

13. J. Liu, *X. L. Chen, W. Wang, B. Song, and Q. S. Huang, Secondary Facet-selective Nucleation and Growth: Highly Oriented Straight SnO2 Nanowire Arrays on Primary micro-rods. Cryst. Growth & Des. 2009, 9, 1757. IF=4.425

14. J. Liu, X. L. Chen, W. J. Wang, Y. Liu, Q. S. Huang, and *Z. P.Guo. Self-assembly of [10-10] grown ZnO nanowhiskers with exposed reactive (0001) facets on hollow spheres and their enhanced gas sensitivity. CrystEngComm, 2011, 13, 3425-3431. IF=3.849

15. J. J. Lin, L. W. Guo, Q. S. Huang, Y. P. Jia, K. Li, X. F. Lai, and *X. L. Chen. Anharmonic phonon effects in Raman spectra of unsupported vertical graphene sheets. Phys. Rev. B 2011, 83, 125430. IF=3.718

16. S. H. Yoo, J. M. Kum, Q. S. Huang, and * S. O. ChoDirect Fabrication of Hierarchical Porous Carbonaceous Microparticles by Electron-Beam Irradiation and Post-Annealing of Polystyrene Colloidal CrystalsMacro. Mater. Eng., 2014, 299(4), 447. IF=2.834

17. J. Liu, *X. L. Chen, W. Wang, Q. S. Huang, and K. Zhu, Large Scale Synthesis of Porous ZnO Hollow Structures with Tunable Diameters and Shell Thicknesses, Mater. Lett. 2009, 63, 2221. IF=2.437

18. R. Yang, Q. S. Huang, *G. Y. Zhang, X. L. Chen, Hongjun Gao, Substrate Doping Effects on Raman Spectrum of Epitaxial Graphene on SiC. J. Appl. Phys. 2010, 107, 034105. IF=2.101

19. *Q. S. Huang, D. L. Chen, Y. Z. Ma, and J. Liu. "Nucleation of epitaxial graphene on SiC substrate by thermal annealing and chemical vapor deposition." Applied Physics A, 2013, 112(2), 349. IF=1.444

20. Q. S. Huang, L. W. Guo. W. J. Wang, G. Wang, W. Y. Wang, Y. P. Jia, J. J. Lin, K. Li, and *X. L. Chen. Raman spectrum of epitaxial graphene on SiC (0001) by pulsed electron irradiation. Chin. Phys. Lett. 2010, 27, 046803. IF=0.875

21. Kang-jia Duan, Ling Zhang, Xi-zhi Yuan, Shan-shan Han, Yu Liu, and Qing-song Huang*International Journal of Minerals, Metallurgy and Materials.2015,22,714. (IF=0.791)

22. Y. P. Jia, *L. W. Guo, W. Lu, Y. Guo, J. J. Lin, K. X. Zhu, L. L. Chen, Q. S. Huang, J. Huang, Z. L. Zhi, and *X. L. Chen, Fabrication and characterization of graphene derived from SiC ,Sci. Chin. Phys., 2014, 57(5), 1004.

会议论文

1. X-Ray scattering characterization of epitaxial graphene on SiC (0001), 10th National Conference on X-ray Diffraction and ICDD Workshop, October 11-18, 2009, Shanghai.

2. Formation of centimeter–scale epitaxial graphene on 4H-SiC by pulsed electron irradiation, International Workshop on Nanomaterials and Nanodevices, Beijing Session, July 1-3, 2009.

3. Seminar for graphene, Chinese Academy of Sciences, Beijing, March, 2009.

4. Modification of the wettability of a graphene sheet by Electron beam irradiation, The 3rd International Conference on Recent Progress in Graphene Research October 3-6, 2011, Sungkyunkwan University Suwon, Korea.

5. The controllable terrace height on 4H-SiC (0001) by hydrogen etching, the fifteenth National Member's Congress of the Chinese Crystallographic Society, CCCG-15, Nov. 6-10, 2009, Ningbo. Zhejiang Province.

6. Preparation and Characterization graphene on SiC, The fourteenth National Member's Congress of the Chinese Crystallographic Society, CCCG-14, July 27-30, 2008, Huangshan, Anhui Province. (GE Healthcare Award)

地址:四川省成都市一环路南一段24号 邮编:610065 电话:028-85405222 网站浏览